MIL-PRF-19500/343F
8 February 2002
SUPERSEDING
MIL-PRF-19500/343E
28 November 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICO N,
LOW POWER, TYPES 2N2857 AND 2N2857UB
JAN, JANTX, JANTXV, AND JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low power, ultra-high
frequency transistors. Four levels of product assurance are provided for each device type and two levels for
unencapsulated chips as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-72) and 2 (surface mount) and figure 3 (JANHC, JANKC).
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TC = +25°C
IC
VCBO
VCEO
VEBO
TJ and TSTG
mW
MW mA dc V dc V dc V dc °C
200
300 40 30 15 3 -65 to +200
(1) Derate linearly 1.14 mW/°C for TA > +25°C.
(2) Derate linearly 1.71 mW/°C for TC > +25°C.
1.4 Primary electrical characteristics at TA = +25°C.
h
FE1 | hfe | Ccb F Gpe r
b' Cc
V
CE = 1 V dc
IC = 3 mA dc VCE = 6 V dc
IC = 5 mA dc
f = 100 MHz
VCB = 10 V dc
IE = 0
f = 100 kHz <
f< 1 MHz
VCE = 6 V dc
IC = 1.5 mA dc
f = 450 MHz
Rg = 50 Ω
VCE = 6 V dc
IC = 1.5 mA dc
f = 450 MHz
VCB = 6 V dc
IE = 2 mA dc
f = 31.9 MHz
Min
Max
30
150
10
21
pf
1.0
db
4.5
db
12.5
21
ps
4
15
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form
1426) appearing at the end of this docum ent or by letter.
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and proce
ss conver sion measures
necessary to comply with this document shall be
completed by 8 May 2002.
MIL-PRF-19500/343F
2
Dimensions
Inches Millimeters
Symbol Min Max Min Max
Notes
CD .178 .195 4.52 4.95 5
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84 5
LC .100 TP 2.54 TP 7,8
LD .016 .021 .406 .533 7,8
LL .500 .750 12.70 19.05 7,8
LU .016 .019 .41 .48
L1 .050 1 .27
L2 .250 6.35
P .100 2.54
Q .040 1.02 5
TL .028 .048 .71 1.22
TW .036 .046 .91 1.17
r .007 .18
α 45° TP
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in
figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8. All four leads.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1. Physical dimensions for 2N2857, (TO-72).
TO-72
MIL-PRF-19500/343F
3
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
A .046 .056 0.97 1.42
A1 .017 .035 0.43 0.89
B1 .016 .024 0.41 0.61
B2 .016 .024 0.41 0.61
B3 .016 .024 0.41 0.61
D .085 .108 2.41 2.74
D1 .071 .079 1.81 2.01
D2 .035 .039 0.89 0.99
D3 .085 .108 2.41 2.74
E .115 .128 2.82 3.25
E3 .128 3.25
L1 .022 .038 0.56 0.96
L2 .022 .038 0.56 0.96
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions, surface mount (UB version).
UB
MIL-PRF-19500/343F
4
SCA0011
BE
SCA0011
BE
Die size ----------.016 x .016 inch (0.406 x 0.406 millimeter).
Die thickness---.008 ± .0016 inch (0.203 x 0.406 millimeter).
Base pad--------.0023 x .0023 inch (0.058 x 0.058 millimeter).
Emitter pad-----.0023 x .0023 inch (0.058 x 0.058 millimeter).
Back metal:-----Gold, 6500 ± 1950 Ang
Top metal-------Aluminum, 17500 ± 2500 Ang
Back side-------Collector
Glassivation----SiO2, 7500 ± 1500 Ang
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
MIL-PRF-19500/343F
5
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unles s otherw ise spe cif ied, the is sue s of these docum ent s are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indi cated, copies of the above spe cif ications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific ex empt ion has bee n obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.4).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2 and 3.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups of table I herein.
MIL-PRF-19500/343F
6
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking on
the UB package may be omitted from the body, but shall be retained on the initial container.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
sp ecified herein.
* 4.2.1. JANHC a nd JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c Thermal impedance
Method 3131 of MIL-STD-750. Thermal impedance
Method 3131 of MIL-STD-750.
7 (1) (1)
9 “ICES, hFE1”. Not applicable
10 48 hours minimum 48 hours minimum
11 ICES, hFE1; ∆ICES = 100 percent of
initial value or 5 nA, whichever is
greater; ∆hFE1 = 15 percent
ICES, hFE1
12 See 4.3.1 See 4.3.1
13 Subgroups 2 and 3 of table I
herein; ∆ICES = 100 percent of initial
value or 5 nA dc, whichever is
greater; ∆hFE1 = 15 percent
Subgroup 2 of table I herein;
∆ICES = 100 percent of initial
value or 5 nA dc, whichever is
greater; ∆hFE1 = 15 percent
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 V dc, PT = 200 mW at, TA =
room ambient as defined in the general requirements of 4.5 of MIL-STD-750. NOTE: No heat sink or forced air
cooling on the devices shall be permitted.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
MIL-PRF-19500/343F
7
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample
of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. See 4.4.2.2 herein for JAN,
JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with the steps of table II herein and as specified in the notes for table II.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Conditions
B4 1037 VCB = 10 V dc
* B5 1027 VCB = 10 V dc; 1,000 hours maximum rated power shall be applied and ambient
temperature adjusted to achieve TJ = +150°C minimum. N = 45, c=0.
4.4.2.2 Group B inspection (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step Method Conditions
1 1027 Steady-state life: Test condition B, 340 hours, VCB = 10 V dc; maximum rated power
shall be applied and ambient temperature adjusted to achieve TJ = +150°C min imum;
n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0
2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B, step 2 shall not be required more than once for any single wafer
lot. n = 45, c = 0.
3 1032 High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A conformance
inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the
samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be
pulled prior to the application of final lead finish.
MIL-PRF-19500/343F
8
4.4.3 Group C inspection, JANS. Group C inspection shall be conducted in accordance with the tests and
conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 herein (JANS). See 4.4.3.2
herein for JAN, JANTX, and JANTXV group C testing. Electrical measurements (end points) and delta requirements
shall be in accordance with the steps of table II herein as specified in the notes for table II.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UB devices.
C6 1026 VCB = 10 V dc, 1,000 hours; maximum rated power shall be applied and ambient
temperature adjusted to achieve TJ = +150°C minimum. N = 45 devices, c = 0. For small
lots, n = 12 devices, c = 0.
4.4.3.2 Group C inspection, JAN, JANTX, and JANTXV, table VII of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UB devices.
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating
prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead
finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered
as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the associated specification that did not request the performance of
table III herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Noise figure. The noise figure shall be measured using commercially available test equipment and its
associated standard test procedures (see figure 4).
MIL-PRF-19500/343F
9
TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Method
Conditions
Symbol
Min
Max
Unit
Subgroup 1 2/
Visual and mechanical
examination 3/
Solderability 3/ 4/
Resistance to solvents
3/ 4/ 5/
Te mp cy cl i n g 3/ 4/
Heremetic seal 4/
Fine leak
Gross leak
Electri cal m easurements 4/
Bond strength 3/ 4/
Subgroup 2
Breakdown voltage,
collector to e mit te r
Collector to base
cutof f cu rren t
Collector to base
cutof f cu rren t
Emitte r to base
cutof f cu rren t
Forward-current
transfer ratio
Collector-e mitter
saturat i on voltage
Base-emi tter
saturat i on voltage
2071
2026
1022
1051
1071
2037
3011
3036
3036
3061
3076
3071
3066
n = 45 devices, c = 0
n = 15 leads, c = 0
n = 15 devices, c = 0
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Group A, subgroup 2
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Bias conditi on D;
IC = 3 mA dc
Bias conditi on D;
VCB = 15 V dc
Bias conditi on D;
VCB = 30 V dc
Bias conditi on D
VEB = 3 V dc
VCE = 1 V dc;
IC = 3 mA dc
IC = 10 mA dc;
IB = 1 mA dc;
Test condition A;
IC = 10 mA dc;
IB = 1 mAdc;
V(BR)CEO
ICBO1
ICBO3
IEBO1
hFE1
VCE(sat)
VBE(sat)
30
15
10
1
10
150
0.4
1.0
V dc
nA dc
µA dc
µA dc
V dc
V dc
See footnotes at end of table.
MIL-PRF-19500/343F
10
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/
Method
Conditions
Symbol
Min
Max
Unit
Subgroup 2 (continued)
Collector to e mit te r
cutof f cu rren t
Subgroup 3
High temperat ure
operation
Collector to base
cutof f cu rren t
Low temperature
operation
Forward-current
transfer ratio
Subgroup 4
Noise figure
Magnitude of common-emitter
small- signal short-circuit
forward-current transfer ratio
Small-signal short-circuit
forward current trans fer ratio
3041
3036
3076
3306
3206
Bias conditi on C;
VCE = 16 V dc
TA = +150°C
Bias conditi on D;
VCB = 15 V dc
TA = -55°C
VCE = 1 V dc;
IC = 3 mA dc
VCE = 6 V dc;
IC = 1.5 mA dc;
f = 450 MHz
Rg = 50 Ω
(case lead grounded)
(see 4.5.2 and figure 4)
VCE = 6 V dc;
IC = 5 mA dc;
f = 100 MHz
(case lead grounded)
VCE = 6 V dc;
IC = 2 mA dc;
(case lead floating)
ICES
ICBO2
hFE2
F
hfe
hfe
10
10
50
100
1.0
4.5
21
220
nA dc
µA dc
dB
See footnotes at end of table.
MIL-PRF-19500/343F
11
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Inspection 1/
Method
Conditions
Symbol
Min
Max
Unit
Subgroup 4 (continued)
Collect or to base -feedback
capacitance
Small-signal power gain
Collect or - base time
constant
3256
VCB = 10 V dc;
IE = 0 mA dc;
100 kHz < f < 1 MHz
(see 4.5.1)
VCE = 6 V dc;
IE = 1.5 mA dc;
f = 450 MHz
VCB = 6 V dc;
IE = 2 mA dc;
f = 31.9 MHz
(see figure 5)
Ccb
Gpe
rb' Cc
12.5
4
1.0
21
15
pF
dB
pF
1/ For sampling plan (unless otherw ise spe cif ied), se e M IL-PR F-19500 .
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
MIL-PRF-19500/343F
12
TABLE II. Groups A, B, and C electrical end-point inspection measurements. 1/ 2/ 3/ 4/
MIL-STD-750
Limit
Step
Inspection
Method
Conditions
Symbol Min Max
Unit
1.
Collector-base
cutoff current 3036 Bi as condition D;
VCB = 15 V dc ICBO1 10 nA dc
2. Collect or - base
cutof f cu rren t 3036 Bi as condition D;
VCB = 15 V dc ICBO2 20 nA dc
3. Collector to emitter
voltage (saturated) 3071 IC = 10 mA dc;
IB = 1.0 mA dc pulsed VCE(sat) 0.4 V dc
4. Base-emitter voltage
(saturated) 3066 Test c onditi on A
IC = 10 mA dc;
IB = 1 mA dc
VBE(sat) 1.0 V dc
5. Forward current
transfer ratio 3076 VCE = 1 V dc; IC = 3 mA dc hFE1 30 150
6.
Collect or-base cutoff
current
3036
Bias conditi on D;
VCB = 15 V dc
∆ICB01 100 percent of
initial value or
5 nA dc, whichever
is greater.
7. Forward current
transfer ratio 3076 VCE = 1.0 V dc ;
IC = 3 mA dc; ∆hFE1 + 25 percent
change from initial
value.
8. Collector to emitter
voltage (saturated) 3071 IC = 10 mA dc;
IB = 1.0 mA dc ∆VCE(sat) + 50 mV dc change
from initial value.
1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, steps 1, 3, 4, 5, and 6.
b. Subgroups 4 and 5, see table II herein, steps 2, 3, 4, 5, and 8.
2/ The electrical measurements for group B, 4.4.2.2 herein (JAN, JANTX, and JANTXV) are as follows:
Steps 1, 2, and 3 of 4.4.2.2, see table II herein, steps 2, 6, 7, and 8.
3/ The electrical measurements for table VII (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 2 and 3, see table II herein, steps 1, 3, 4, 5, and 6 (for JANS).
b. Subgroup 6, see table II herein, steps 2, 3, 4, 5, 6, 7, and 8 (for JANS).
4/ The electrical measurements for group C, 4.4.3.2 herein (JAN, JANTX, and JANTXV) are steps 1, 3, 4 and 5.
MIL-PRF-19500/343F
13
* TABLE III. Group E inspection (all quality levels) - for qualification only.
Inspection
MIL-STD-750 Qualification
Method Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051 Test c onditi on C, 500 cycles.
Hermet ric s eal
1071
Fine leak
Gross leak
Electrical measurements
See group A, subgroup 2.
Subgroup 2
45 devices
c = 0
Intermitt ent life 1037 Int erm itt ent operat i on lif e: VCB = 10 V dc;
6,000 cycles.
Electrical measurements
See group A, subgroup 2.
Subgroup 3, 4, 5, 6, and 7
Not applicable
Subgroup 8
Reverse st abili ty
1033
Condition A ≥ 400 V
Condition B < 400 V
45 devices
c = 0
MIL-PRF-19500/343F
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UHF NOISE SOURCE NOISE FIGURE
HEWLETT-PACKARD METER HEWLETT-
TYPE 349A OR PACK ARD TYPE 342 A
EQUIVALENT OR EQUIVALENT
450 MHZ
50 OHM 450 MHZ RF AMPLIFIER 60 MHZ
10 DB PAD RF AM PLIFIER AND IF AMPLIFIER
450/390 MHZ
MIXER
390 MHZ OSCILLATOR
HEWLETT-PACKARD
TYPE 608C OR
EQUIVALENT
FIGURE 4. Block diagram for noise figure test.
Procedure:
1. With a short circuit applied between the collector and emitter terminals adjust 31.9 MHz input for 0.5 V RMS
at emitter terminal of transistor.
2. After removing the short circuit between the collector and emitter circuit, insert unit to be tested and adjust VCC
and VEE for VCB = 6 V dc, IE = 2 mA dc.
3. Read rb'CC on RF voltmeter scale (rb'CC in picoseconds = 10 times meter indication in millivolts) (1 millivolt =
10 picoseconds).
4. External interlead shield to isolate the collector lead from the emitter and base lead.
FIGURE 5. Collector-base time constant test circuit (an equivalent circuit may be used).
MIL-PRF-19500/343F
15
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact
the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are
maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or
within the Military Departments' System Command. Packaging data retrieval is available from the managing Military
Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Lead formation and finish may be specified (see 3.4.1).
d. Type designation and product assurance level.
e. For die acquisition, the JANHC or JANKC letter version shall be specified (see figure 3).
f. Surface mount designation if applicable.
g. Packaging requirements (see 5.1).
6.3 Supersession information. Devices covered by this specification supersede the manufacturers' and users' Part
or Identifying Number (PIN). The term PIN is equivalent to the term part number which was previously used in this
specification. This information in no way implies that manufacturers' PINs are suitable as a substitute for the military
PIN.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the product s covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center
Columbus, DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000
MIL-PRF-19500/343F
16
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N2857) will be identified on the QPL.
Die ordering information
Manufacturer
PIN
34156
2N2857
JANHCA2N2857, JANKCA2N2857
* 6.6. Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 11 (Project 5961-2554)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 71, 99
STANDARDIZATION DOCUM ENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend cont ractual requireme nts.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/343F 2. DOCUMENT DATE
8 February 2002
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N2857 AND
2N2857UB JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC.
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG) Previ ous editions are ob solete WHS/DIOR, Feb 99
