BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■COMPLEMENTARY PNP - NPN DEVICES
■MON OLI T HIC DA RLING T O N
CONF IG U R ATIO N
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53F is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
packag e. It is intented for use in power linear and
switching applications. The complementary PNP
type is BDX54F. INT E R NAL SCH E M ATI C DIAG RA M
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53F
PNP BDX54F
VCBO Collector-Base Voltag e (IE = 0) 160 V
VCEO Collector-Emitter Voltage (IB = 0) 160 V
VEBO Emitter-base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Peak Current 12 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC60 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
®
1/4