1
SURMOUNTTM Low Barrier
0201 Footprint Silicon Schottky Diodes
Rev. V1
MA4E2501-1290 Series
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit w ww.macomt ech.com for add itional data sheets and product informa tion.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications,
simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications
are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be
available. Commitment to produce in volume is not guaranteed.
Features
• Extremely Low Parasitic Capitance and Inductance
• Extremely Small 0201 (600x300um) Footprint
• Surface Mountable in Microwave Circuits , No Wirebonds
Required
• Rugged HMIC Construction with Po lyimide Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16 hours)
• Lower Susceptibility to ESD Damage
Description
The MA4E2501L-1290 SurMount™ Diodes are Silicon Low
Barrier Schottky Devices fabricated with the patented
Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes or
via conductors embedded in a glass dielectric, which acts as the
low dispersion, microstrip transmission medium. The
combination of silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics in a low
profile, relia ble device.
The Surmount Schottky devices are excellent choices for circuits
requiring the small parasitics o f a beam lead device coupled with
the superior mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to connect the
Schottky contacts to the metalized mounting pads on the bottom
surface of the chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional devices. They
have lower susceptibility to electrostatic discharge than
conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The extremely small “ 0201 ” outline allows for Surface Mount
placement and multi-functional polarity orientations.
A
C
D E F
G
B
Case Style 1290
dim. in mm
min. max. min. max.
A 0.023 0.025 0.575 0.625
B 0.011 0.013 0.275 0.325
C 0.004 0.008 0.102 0.203
D 0.006 0.008 0.150 0.200
E 0.007 0.009 0.175 0.225
F 0.006 0.008 0.150 0.200
G 0.009 0.011 0.220 0.270
+
Anode
-
Cathode
2
SURMOUNTTM Low Barrier
0201 Footprint Silicon Schottky Diodes
Rev. V1
MA4E2501-1290 Series
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit w ww.macomt ech.com for add itional data sheets and product informa tion.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications,
simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications
are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be
available. Commitment to produce in volume is not guaranteed.
Elecrtrical Specifications @ 25°C
Model
Number Type Recommended
Frequency
Range
Vf @ 1 mA
( mV ) Vb @ 10 uA
( V ) Ct @ 0V
( pF ) Rt Slope Resistance
( Vf1–Vf2 )/(10.5mA – 9.5mA )
( Ω )
MA4E2501L-
1290 Low
Barrier DC – 18 GHz 330 Max
300 Typ 3 Min
5 Typ 0.12 Max
0.10 Typ 10 Typical
14 Max
Rt is the dynamic slope resistance where Rt = Rs + Rj ,
where Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic
Resistance.
Applications
The MA4E2501L-1290 SurMount Low Barrier Schottky
diodes are recommended for use in microwave circuits
through Ku band frequencies for lower power applications
such as mixers, sub-harmonic mixers, detectors and limiters.
The HMIC construction facilitates the direct replacement of
more fragile beam lead diodes with the corresponding
Surmount diode, which can be connected to a hard or soft
substrate circuit with solder. C
Handling
All semiconductor chips should be handled with care to
avoid damage or contamination from perspiration and skin
oils. The use of plastic tipped tweezers or vacuum pickup s
is strongly recommended for individual components. The
top surface of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these SurMount devices allows
the use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic
discharge (ESD) control is required at all times, due to the
sensitive nature of Schottky ju nctions.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Die Bonding
Die attach for these devices is made simple through the use
of surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these devices,
and are opposite the active junction. The devices are well
suited for high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable
for usage. Die attach with Electrically Conductive Silver
Epoxy is Not Recom m e nded .
Absolute Maximum
Parameter Value
Operating Temperature -40° C to + 1 50° C
Storage Temperature -40° C to + 150° C
Forward Current 20 mA
Reverse Voltage 5V
RF C.W. Incident Po wer + 20 dBm
RF & DC Dissipated Power 50 mW
Exceeding any of these values may result in permanent damage
Die Bonding
For Hard substrates, we recommend utilizing a vacuum tip
and force of 60 to 100 grams applied uniformly to the top
surface of the device, using a hot gas bonder with equal heat
applied across the bottom mounting pads of the device.
When soldering to soft sub strates, it is recommend ed to use a
lead-tin interface at the circuit board mounting pads. Position
the die so that its mounting pads are aligned with the circuit
board mounting pads. Reflow the solder paste by applying
Equal heat to the circuit at both die-mounting pads. The
solder joint must Not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow should Not
be performed by causing heat to flow through the top surface
of the die. Since the HMIC glass is transparent, the edges of
the mounting pads can be visually inspected through the die
after die attach is completed.
3
SURMOUNTTM Low Barrier
0201 Footprint Silicon Schottky Diodes
Rev. V1
MA4E2501-1290 Series
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit w ww.macomt ech.com for add itional data sheets and product informa tion.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications,
simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications
are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be
available. Commitment to produce in volume is not guaranteed.
MA4E2501L-1290 Low Barrier SPICE PARAMETERS
Is
( nA ) Rs
( Ω ) N Cj0
( pF ) M Ik
( mA ) Cjpar
( pF ) Vj
( V ) FC BV
( V ) IBV
( mA )
26 12.8 1.20 1.0 E-2 0.5 14 9.0E-2 8.0 E-2 0.5 5.0 1.0E-2
Typical Performance
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0 100 200 300 400 500
Frequenc y (MH z)
Total Capacitance (pF)
Circuit Mounting Dimensions (Inches)
0.007
0.010
0.008
0.007
0.010
Ordering Information
Part Number Packaging
MA4E2501L-1290W Wafer on Frame
MA4E2501L-1290 Die in Carrier