LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB * 12A, 60V SOURCE DRAIN GATE * rDS(ON) = 0.150 * 2kV ESD Protected * Temperature Compensating PSPICE Model DRAIN (FLANGE) * Peak Current vs Pulse Width Curve * UIS Rating Curve Description JEDEC TO-251AA The RFD3055LE, RFD3055LESM, and RFP3055LE are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) The RFD3055LE, RFD3055LESM, and RFP3055LE incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. GATE SOURCE PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFD3055LE TO-251AA F3055L RFD3055LESM TO-252AA F3055L RFP3055LE TO-220AB FP3055LE Symbol D G NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A. S Formerly developmental type TA49158. Absolute Maximum Ratings TC = +25oC Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . ESD Copyright (c) Harris Corporation 1995 RFD3055LE, RFD3055LESM, RFP3055LE UNITS 60 60 10 V V V 12 Refer to Peak Current Curve Refer to UIS Curve A 48 0.323 -55 to +175 260 2 W W/oC oC oC kV File Number 5-3 4044.1 Specifications RFD3055LE, RFD3055LESM, RFP3055LE Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 1 - 2 V TC = +25oC - - 1 A TC = +150oC - - 50 A VGS = 10V - - 10 A ID = 12A, VGS = 5V - - 0.150 VDD = 30V, ID = 12A, RL = 2.5, VGS = 5V, RGS = 5 - - 120 ns - 10 - ns - 70 - ns tD(OFF) - 25 - ns tF - 30 - ns tOFF - - 85 ns - 28 35 nC - 15 18 nC Zero Gate Voltage Drain Current Gate-Source Leakage Current IDSS IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time Rise Time tD(ON) tR Turn-Off Delay Time Fall Time Turn-Off Time VDS = 60V, VGS = 0V Total Gate Charge QG(TOT) VGS = 0V to 10V Gate Charge at 5V QG(5) VGS = 0V to 5V QG(TH) VGS = 0V to 1V - 1.0 1.2 nC VDS = 25V, VGS = 0V, f = 1MHz - 850 - pF - 170 - pF Threshold Gate Charge VDD = 48V, ID = 12A, RL = 4 Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS - 100 - pF Thermal Resistance Junction-to-Case RJC - - 3.1 oC/W Thermal Resistance Junction-to-Ambient RJA - - 80 oC/W MIN TYP MAX UNITS TO-251, TO-252, TO-220 Source-Drain Diode Ratings and Specifications PARAMETERS SYMBOL TEST CONDITIONS Forward Voltage VSD ISD = 12A - - 1.5 V Reverse Recovery Time tRR ISD = 12A, dISD/dt = 100A/s - - 100 ns 5-4 RFD3055LE, RFD3055LESM, RFP3055LE Typical Performance Curves TC = +25oC 10 10 ZJC, NORMALIZED THERMAL RESPONSE ID, DRAIN CURRENT (A) 100 100s 1ms 1 10ms DC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.1 1 1 0.5 0.1 VDSS MAX = 60V 10 0.01 10-5 100 PDM 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10-1 100 IDM, PEAK CURRENT CAPABILITY (A) 10 8 6 4 2 0 25 50 75 100 125 150 FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT AS FOLLOWS: VGS = 10V 50 10-4 10-3 ID(ON), ON-STATE DRAIN CURRENT (A) 30 VGS = 5V 20 VGS = 4.5V VGS = 4V 10 VGS = 3V 4.5 10-1 100 101 6.0 VDD = 15V 25 VGS = 10V 3.0 10-2 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC 1.5 175 - TC 150 t, PULSE WIDTH (s) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 0 = I25 VGS = 5V 10 10-5 175 I TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC, CASE TEMPERATURE (oC) 40 101 TC = +25oC 100 12 ID, DRAIN CURRENT (A) 10-2 FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 14 ID, DRAIN CURRENT (A) 10-3 t, RECTANGULAR PULSE DURATION (s) FIGURE 1. SAFE OPERATING AREA CURVE 0 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC -55oC 20 +175oC 15 10 5 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 0 7.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0 1.5 3.0 4.5 6.0 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 5-5 7.5 RFD3055LE, RFD3055LESM, RFP3055LE (Continued) ID = 250A 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 VGS = VDS, ID = 250A 2.0 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Typical Performance Curves 1.5 1.0 0.5 0.0 -80 200 -40 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE rDS(ON), ON-STATE RESISTANCE (m) rDS(ON), NORMALIZED ON RESISTANCE 1.5 1.0 0.5 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 80 120 160 200 160 VDD = 15V, PULSE DURATION = 250s 300 2.0 0.0 -80 40 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE PULSE DURATION = 250s, VGS = 5V, ID = 12A 2.5 0 TJ, JUNCTION TEMPERATURE (oC) ID = 18A 250 ID = 3A 200 150 100 2.5 200 ID = 12A ID = 6A 3.0 3.5 4.0 5.0 4.5 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 9. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 10. TYPICAL rDS(ON) FOR VARYING CONDITIONS OF GATE VOLTAGE AND DRAIN CURRENT VDD = 30V, ID = 12A, RL = 2.5 150 100 tF tD(OFF) 50 tD(ON) 0 10 20 30 40 RGS, GATE-TO-SOURCE RESISTANCE () 2.50 30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 15 1.25 RL = 5.0 IG(REF) = 0.35mA VGS = 5V I I FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF GATE RESISTANCE 5.00 3.75 G ( REF ) 20 --------------------- 50 VDD = BVDSS 45 0 0 VDD = BVDSS G ( ACT ) t, TIME (s) I G ( REF ) 80 --------------------I G ( ACT ) VGS , GATE-SOURCE VOLTAGE (V) 60 tR VDS , DRAIN-SOURCE VOLTAGE (V) SWITCHING TIME (ns) 200 0 FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260 5-6 RFD3055LE, RFD3055LESM, RFP3055LE Typical Performance Curves VGS = 0V, FREQUENCY (f) = 1MHz 1200 IAS, AVALANCHE CURRENT (A) 50 CISS 900 600 300 COSS 0 STARTING TJ = +25oC 10 STARTING TJ = +150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS -VDD) +1] CRSS 0 5 10 15 20 1 0.001 25 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 10 FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322 1.2 POWER DISSIPATION MULTIPLIER C, CAPACITANCE (pF) (Continued) 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE 5-7 RFD3055LE, RFD3055LESM, RFP3055LE Test Circuits and Waveforms VDS BVDSS tP L VARY tP TO OBTAIN REQUIRED PEAK IAS DUT RG 0V + - VGS VDS IAS VDD VDD tP IL 0.01 tAV FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS VDD RL tON tOFF tD(ON) tD(OFF) VDS tR VDS VGS DUT tF 90% 90% 10% 0V 10% 90% RGS VGS 10% FIGURE 18. RESISTIVE SWITCHING TEST CIRCUIT 50% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS 5-8 RFD3055LE, RFD3055LESM, RFP3055LE Temperature Compensated PSPICE Model for the RFD3055LE, RFD3055LESM, RFP3055LE .SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95 RLDRAIN CA 12 8 1.68e-9 CB 15 14 1.78e-9 CIN 6 8 0.769e-9 DPLCAP LDRAIN RSCL1 + 51 5 ESCL 51 50 RSCL2 6 8 ESG 9 GATE 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.6e-9 LSOURCE 3 7 4.6e-9 EVTO 20 + 18 16 LGATE - VTO 21 6 - DBODY - RLSOURCE RSOURCE 7 3 SOURCE LSOURCE S2A 12 13 8 RBREAK 15 14 13 S1B RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 0.176e-3 RLDRAIN 2 5 10 RGATE 9 20 9.84 RLGATE 1 9 46 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 76.56e-3 RLSOURCE 3 7 46 RVTO 18 19 RVTOMOD 1 + CIN 8 S1A MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 MOS2 17 18 MOS1 RIN DESD1 91 DESD2 11 EBREAK + 8 RGATE DBREAK RDRAIN + RLGATE IT 8 17 1 S1A S1B S2A S2B DRAIN 2 10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 64.28 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 5 17 18 S2B RVTO 13 CB CA + 6 8 EGS - + 14 5 EDS 8 IT 19 - VBAT + - 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.516 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/31.7,6))} .MODEL DBDMOD D (IS = 3.61e-13 RS = 1.78e-2 TRS1 = 1.70e-2 TRS2 = -4.69e-6 CJO = 3.88e-10 TT = 3.6e-8) .MODEL DBKMOD D (RS = 0.4731 TRS1 = -2.19e-3 TRS2 = 4.7e-5) .MODEL DESD1MOD D (BV = 13.5 NBV = 17.5 IBV = 2.5e-4 RS = 22.2 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 12.86 NBV = 22 IBV = 2.5e-4 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.48e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 2.082 KP = 18.36 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.06e-3 TC2 = -6.22e-7) .MODEL RDSMOD RES (TC1 = 4.48e-3 TC2 = 1.77e-5) .MODEL RSCLMOD RES (TC1 = 3.55e-3 TC2 = 0.20e-5) .MODEL RVTOMOD RES (TC1 = -1.85e-3 TC2 = -4.13e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.4 VOFF= -2.4) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -4.4) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.85 VOFF= 2.15) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.15 VOFF= -2.85) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. 5-9