1N5817RLG - ON SEMICONDUCTOR

July, 2006 − Rev. 10 1Publication Order Number:

1N5817/D

1N5817, 1N5818, 1N5819

1N5817 and 1N5819 are Preferred Devices

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low−voltage, high−frequency inverters, free wheeling diodes, and

polarity protection diodes.

Features

•Extremely Low VF

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•These are Pb−Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max for 10 Seconds

•Polarity: Cathode Indicated by Polarity Band

•ESD Ratings: Machine Model = C (>400 V)

Human Body Model = 3B (>8000 V)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERE

20, 30 and 40 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information on page 6 o

this data sheet.

ORDERING INFORMATION

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MARKING DIAGRAM

A =Assembly Location

1N581x =Device Number

x= 7, 8, or 9

YY =Year

WW =Work Week

G=Pb−Free Package

1N581x

YYWWG

(Note: Microdot may be in either location)

AXIAL LEAD

CASE 59

STYLE 1

1N5817, 1N5818, 1N5819

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MAXIMUM RATINGS

Rating Symbol 1N5817 1N5818 1N5819 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

20 30 40 V

Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V

RMS Reverse Voltage VR(RMS) 14 21 28 V

Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,

RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) IO1.0 A

Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) TA85 80 75 °C

Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,

half−wave, single phase 60 Hz, TL = 70°C) IFSM 25 (for one cycle) A

Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg −65 to +125 °C

Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)

Characteristic Symbol 1N5817 1N5818 1N5819 Unit

Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A)

(iF = 1.0 A)

(iF = 3.0 A)

vF0.32

0.45

0.75

0.33

0.55

0.875

0.34

0.6

0.9

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)(TL = 25°C)

(TL = 100°C)

IR1.0

10 1.0

1. Lead Temperature reference is cathode lead 1/32 in from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

125

115

105

75 2015107.05.04.03.0

2.0

TR, REFERENCE TEMPERATURE (

VR, DC REVERSE VOLTAGE (VOLTS)

Figure 1. Maximum Reference Temperature

1N5817

40 30 23

RqJA (°C/W) = 110

125

115

105

75 2015107.05.0 304.03.0

40 30 23

RqJA (°C/W) = 110

80 60

Figure 2. Maximum Reference Temperature

1N5818

125

115

105

75 2015107.05.0 304.0 40

RqJA (°C/W) = 110

Figure 3. Maximum Reference Temperature

1N5819

TR, REFERENCE TEMPERATURE ( C)

VR, DC REVERSE VOLTAGE (VOLTS)

TR, REFERENCE TEMPERATURE (

1N5817, 1N5818, 1N5819

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NOTE 3. — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal

runaway must be considered when operating this rectifier at

reverse voltages above 0.1 VRWM. Proper derating may be

accomplished by use of equation (1).

A(max)

where TA(max) =

TJ(max) =

PF(AV) =

PR(AV) =

TJ(max) − RqJAPF(AV) − RqJAPR(AV)

Maximum allowable ambient temperature

Maximum allowable junction temperature

(1)

Average forward power dissipation

(125°C or the temperature at which thermal

runaway occurs, whichever is lowest)

Average reverse power dissipation

Junction−to−ambient thermal resistance

Figures 1, 2, and 3 permit easier use of equation (1) by

taking reverse power dissipation and thermal runaway into

consideration. The figures solve for a reference temperature

as determined by equation (2).

= T

J(max)

− R

qJA

R(AV)

(2)

ubstituting equation (2) into equation (1) yields:

A(max)

= T

− Rq

F(AV)

(

Inspection of equations (2) and (3) reveals that TR is the

ambient temperature at which thermal runaway occurs or

where TJ = 125°C, when forward power is zero. The

transition from one boundary condition to the other is

evident on the curves of Figures 1, 2, and 3 as a difference

in the rate of change of the slope in the vicinity of 115°C. The

data of Figures 1, 2, and 3 is based upon dc conditions. For

use in common rectifier circuits, Table 1 indicates suggested

factors for an equivalent dc voltage to use for conservative

design, that is: (4)

VR(equiv) = Vin(PK) x F

The factor F is derived by considering the properties of the

various rectifier circuits and the reverse characteristics of

Schottky diodes.

EXAMPLE: Find TA(max) for 1N5818 operated in a

12−volt dc supply using a bridge circuit with capacitive filter

such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input

Voltage = 10 V(rms), RqJA = 80°C/W.

Step 1. Find V

R(equiv)

. Read F = 0.65 from Table 1,

Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V.

Step 2. Find TR from Figure 2. Read TR = 109°C

Step 1. Find @ VR = 9.2 V and RqJA = 80°C/W.

Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W

@I(FM)

I(AV) = 10 and IF(AV) = 0.5 A.

Step 4. Find TA(max) from equation (3).

Step 4. Find TA(max) = 109 − (80) (0.5) = 69°C.

*Values given are for the 1N5818. Power is slightly lower for the

N5817 because of its lower forward voltage, and higher for the

N5819.

Circuit

Load

Half W ave

Resistive Capacitive*

Full Wave, Bridge

Resistive Capacitive

Full Wave, Center Tapped*†

Resistive Capacitive

Sine W ave

Square Wave

0.5

0.75

1.3

1.5

0.5

0.75

0.65

0.75

1.0

1.5

1.3

1.5

**Note that VR(PK) ≈ 2.0 Vin(PK).†Use line to center tap voltage for Vin.

Table 1. Values for Factor F

1N5817, 1N5818, 1N5819

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7/8

10 3/45/81/23/81/4 1.01/81

RθJL

, THERMAL RESISTANCE, JUNCTION−TO−LEAD (

°C/W)

BOTH LEADS TO HEATSINK,

EQUAL LENGTH

MAXIMUM

TYPICAL

L, LEAD LENGTH (INCHES)

Figure 4. Steady−State Thermal Resistance

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05 4.02.01.00.80.60.40.2

PF(AV), AVERAGE POWER DISSIPATION (WATTS)

IF(AV), AVERAGE FORWARD CURRENT (AMP)

SQUARE WAVE

TJ ≈ 125°C

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

10k2.0k1.0k5002001005020105.02.01.00.50.20.1 5.0k

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

ZqJL(t) = ZqJL • r(t)

Ppk Ppk

TIME

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak of

equivalent square power pulse.

DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where

DTJL = the increase in junction temperature above the lead temperature

r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,

i.e.:

r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.

t, TIME (ms)

NOTE 4. — MOUNTING DATA

Data shown for thermal resistance, junction−to−ambient

(RqJA) for the mountings shown is to be used as typical guide-

line values for preliminary engineering, or in case the tie

point temperature cannot be measured.

TYPICAL VALUES FOR RqJA IN STILL AIR

Mounting

Method 1/8 1/4 1/2 3/4

Lead Length, L (in)

RqJA

67 65

80 72

87 85

100

°C/W

°C/W50

Mounting Method 1

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

Mounting Method 3

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

L = 3/8″

BOARD GROUND

PLANE

VECTOR PIN MOUNTING

Mounting Method 2

Sine Wave

I(FM)

I(AV)

= π (Resistive Load)

Capacitive

Loads {

Figure 5. Forward Power Dissipation

1N5817−19

Figure 6. Thermal Response

1N5817, 1N5818, 1N5819

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100705.0

7.0

5.0

3.0 207.0 103.02.0 301.0 40

5.0

3.0

2.0

0.3

0.2

0.1

403612

1.0

0.5

0.05

0.03 2416 208.04.0 28032

7.0

5.0

2.0

0.2

0.3

0.5

0.7

1.0

3.0

0.9 1.0 1.1

0.1

0.07

0.05

0.03

0.02 0.60.50.40.30.2 0.70.1 0.8

NOTE 5. — THERMAL CIRCUIT MODEL

(For heat conduction through the leads)

TA(A) TA(K)

RqS(A) RqL(A) RqJ(A) RqJ(K) RqL(K) RqS(K)

TL(A) TC(A) TJTC(K) TL(K)

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

iF, INSTANTANEOUS FORWARD CURRENT (AMP)

Figure 7. Typical Forward Voltage

IFSM, PEAK SURGE CURRENT (AMP)

NUMBER OF CYCLES

Figure 8. Maximum Non−Repetitive Surge Current

IR, REVERSE CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Typical Reverse Current

TC = 100°C

25°C

1 Cycle

TL = 70°C

f = 60 Hz

Surge Applied at

Rated Load Conditions

1N5817

1N5818

1N5819

TJ = 125°C

100°C

25°C

Use of the above model permits junction to lead thermal re-

sistance for any mounting configuration to be found. For a

given total lead length, lowest values occur when one side of

the rectifier is brought as close as possible to the heatsink.

Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature

RqS = Thermal Resistance, Heatsink to Ambient

RqL = Thermal Resistance, Lead to Heatsink

RqJ = Thermal Resistance, Junction to Case

PD = Power Dissipation

(Subscripts A and K refer to anode and cathode sides, re-

spectively.) Values for thermal resistance components are:

RqL = 100°C/W/in typically and 120°C/W/in maximum

RqJ = 36°C/W typically and 46°C/W maximum.

75°C

1N5817, 1N5818, 1N5819

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NOTE 6. — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of

majority carrier conduction, it is not subject to junction

diode forward and reverse recovery transients due to

minority carrier injection and stored charge. Satisfactory

circuit analysis work may be performed by using a model

consisting of an ideal diode in parallel with a variable

capacitance. (See Figure 10.)

Rectification efficiency measurements show that

operation will be satisfactory up to several megahertz. For

example, relative waveform rectification efficiency is

approximately 70 percent at 2.0 MHz, e.g., the ratio of dc

power to RMS power in the load is 0.28 at this frequency,

whereas perfect rectification would yield 0.406 for sine

wave inputs. However, in contrast to ordinary junction

diodes, the loss in waveform efficiency is not indicative of

power loss: it is simply a result of reverse current flow

through the diode capacitance, which lowers the dc output

voltage.

10 200.8

200

100

6.04.02.01.00.6 8.00.4 40

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

TJ = 25°C

f = 1.0 MHz

1N5819

1N5818

1N5817

ORDERING INFORMATION

Device Package Shipping†

1N5817 Axial Lead* 1000 Units / Bag

1N5817G Axial Lead* 1000 Units / Bag

1N5817RL Axial Lead* 5000 / Tape & Reel

1N5817RLG Axial Lead* 5000 / Tape & Reel

1N5818 Axial Lead* 1000 Units / Bag

1N5818G Axial Lead* 1000 Units / Bag

1N5818RL Axial Lead* 5000 / Tape & Reel

1N5818RLG Axial Lead* 5000 / Tape & Reel

1N5819 Axial Lead* 1000 Units / Bag

1N5819G Axial Lead* 1000 Units / Bag

1N5819RL Axial Lead* 5000 / Tape & Reel

1N5819RLG Axial Lead* 5000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

1N5817, 1N5818, 1N5819

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PACKAGE DIMENSIONS

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F−−− 1.27−−− 0.050

K25.40 −−−1.000 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO−41 OUTLINE SHALL APPLY

4. POLARITY DENOTED BY CATHODE BAND.

5. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

AXIAL LEAD

CASE 59−10

ISSUE U

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES) STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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Phone: 81−3−5773−3850

1N5817/D

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