March 2005
©2005 Fairchild Semiconductor Corporation FDS6679 Rev C1 (W)
FDS6679
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer t o drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
R
DS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (±25V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –30 V
VGSS Gate-Source Voltage ±25 V
ID Drain Current – Continuous (Note 1a) –13 A
– Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.2
PD
(Note 1c) 1.0
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6679 FDS6679 13’’ 12mm 2500 units
FDS6679
FDS6679 Rev C1 (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –23
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
5
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –13 A
VGS = –4.5 V, ID = –11 A
VGS=–10 V, ID =–13 A, TJ=125°C
7.3
10
9.5
9
13
13
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –13 A 44 S
Dynamic Characteristics
Ciss Input Capacitance 3939 pF
Coss Output Capacitance 972 pF
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz 498 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 19 34 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 110 176 ns
tf Turn–Off Fall Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
65 104 ns
Qg Total Gate Charge 71 100 nC
Qgs Gate–Source Charge 12 nC
Qgd Gate–Drain Charge
VDS = –15 V, ID = –13 A,
VGS = –10 V
15 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guar ante ed by design whil e RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6679
FDS6679 Rev C1 (W)
Typical Characteristics
0
10
20
30
40
50
0 0.5 1 1.5 2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
VGS = -10V
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
-6.0V
0.6
1
1.4
1.8
2.2
2.6
3
0 1020304050
-ID, DIRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.0V
-4.5V
-6.0V
-3.5V
-4.0V
-5.0V
-10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistan ce Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -13A
VGS = -10V
0
0.01
0.02
0.03
0.04
22.533.544.55
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -7.0A
TA = 125oC
TA = 25oC
Figure 3. On-Resist an ce Variation with
Temperature. Figure 4. On-Resist an ce Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.5 2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
TA = -125oC
25oC
-55oC
VDS = -5.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679
FDS6679 Rev C1 (W)
Typical Characteristics
0
2
4
6
8
10
0 1020304050607080
Qg, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
ID = -13A VDS = -5V -10V
-15V
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteri stics. Figure 8. Capacitance Cha racteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125
o
C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient T hermal Response Cur ve.
Thermal chara cterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6679
