IT(AV) 50 70 90 A
@ TC70 70 70 oC
IT(RMS) 80 110 141 A
ITSM @
50Hz 1310 1660 1780 A
@ 60Hz 1370 1740 1870 A
I2t @ 50Hz 8550 13860 15900 A2s
@ 60Hz 7800 12650 14500 A2s
I2√t 85500 138500 159100 A2√s
V DRM/VRRM 100 to 1200 V
TJ-40 to 125 oC
Parameters T50RIA T70RIA T90RIA Units
Major Ratings and Characteristics
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Description
MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules
50 A
70 A
90 A
T..RIA SERIES
1
Bulletin I27105 rev. B 02/02
www.irf.com
T..RIA Series
2
Bulletin I27105 rev. B 02/02
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IT(AV) Max. average on-state current 50 70 90 A 180° conduction, half sine wave
@ Case temperature 70 70 70 °C
IT(RMS) Max. RMS on-state current 80 110 141 A
ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage
on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied
surge current 1100 1400 1500 t = 10ms 100% VRRM
1150 1460 1570 t = 8.3ms reapplied Sine half wave,
I2t Maximum I2t for fusing 8550 13860 15900 A2s t = 10ms No voltage Initial TJ = TJ max.
7800 12650 14500 t = 8.3ms reapplied
6050 9800 11250 t = 10ms 100% VRRM
5520 8950 10270 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 85500 138500 159100 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 0.97 0.77 0.78 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.13 0.88 0.88 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 4.1 3.6 2.9 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 3.3 3.2 2.6 (I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 1.60 1.55 1.55 V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
IHMaximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C
ILMaximum latching current 400 mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
tgd Typical turn-on time 0.9 µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr Typical reverse recovery time 3.0 µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
tqTypical turn-off time 110 µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
Parameter T50RIA T70RIA T90RIA Units Conditions
On-state Conduction
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code peak reverse voltage peak reverse voltage @ 25°C
VVµA
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300
Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
T..RIA Series
3
Bulletin I27105 rev. B 02/02
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TJMax. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 150 °C
range
RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat and greased
case to heatsink
T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2)
torque ± 10% terminals 3 ± 10% M5 screw terminals
wt Approximate weight 54 g See outline table
Case style D-56 T type
IRRM Maximum peak reverse and 15 mA TJ = TJ = TJ max.
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
dv/dt Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated VDRM (1)
voltage
Blocking
Thermal and Mechanical Specifications
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Parameter T50RIA T70RIA T90RIA Units Conditions
Parameter T50RIA T70RIA T90RIA Units Conditions
Triggering
PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 10 10 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1Ω
1.5 1.5 1.5 TJ = TJ
max.
IGT Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 100 120 120 mA TJ = 25°C load; Ra = 1Ω
50 60 60 TJ = TJ
max.
VGD Max. gate voltage 0.2 0.2 0.2 V @ TJ = TJ max., rated VDRM
applied
that will not trigger
IGD Max. gate current 5.0 6.0 6.0 mA
that will not trigger
di/dt Max. rate of rise of 200 A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt
turned-on current 180 Ig = 400mA for T50RIA and Ig = 500mA for
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
Parameter T50RIA T70RIA T90RIA Units Conditions
non lubricated
threads
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90
T..RIA Series
4
Bulletin I27105 rev. B 02/02
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Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o120o90o60o30o180o120o90o60o30o
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K/W
T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
All dimensions in millimeters (inches)
Outline Table
Device Code
1
T 50 RIA 120
Circuit configuration **
234
1- Module type
2- Current rating
3- Circuit configuration **
4- Voltage code : code x 10 = VRRM
Ordering Information Table
G
+
-
T..RIA Series
5
Bulletin I27105 rev. B 02/02
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Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
DC
30
60
90
120
180
Average On-s tate Current (A)
Maximum Allowable Cas e T emperature ( C)
Conduction P eriod
T 50R IA.. S eries
R (DC) = 0.65 K /W
thJ C
0 20406080100120
Max imum Allowable Ambient T emper ature ( C)
0.3 K/W
10 K/
W
5 K/
W
3 K/
W
2 K/
W
1.5 K/
W
1 K/
W
0.7 K/W
0.5 K/
W
R = 0.1 K/
W - Delta R
thSA
0
10
20
30
40
50
60
70
80
0 1020304050
RMS Limit
Conduction Angle
180
120
90
60
30
Maximum Average On-s tate P ower L os s (W)
Average On-s tate Current (A)
T 50R IA.. S eries
T = 125 C
J
020406080100120
Max imum Allowable Ambient T emperature ( C)
R = 0.1 K/
W - Delta R
thSA
5 K/W
3 K/
W
2 K/
W
1.5 K/
W
1 K/
W
0.7 K/
W
0.5 K/
W
0.3 K/W
0
10
20
30
40
50
60
70
80
90
100
110
0 1020304050607080
DC
180
120
90
60
30
RMS Limit
Conduction P eriod
Maximum Average On-s tate P ower L os s (W)
Average On-s tate Current (A)
T 50R IA.. S eries
T = 125 C
J
50
60
70
80
90
100
110
120
130
0 102030405060
30 60 90
120 180
Average On-s tate Current (A)
Maximum Allowable Cas e T emperature ( C)
Conduction Angle
T 50R IA.. S eries
R (DC) = 0.65 K /W
thJ C
T..RIA Series
6
Bulletin I27105 rev. B 02/02
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Fig. 9 - Gate Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
500
600
700
800
900
1000
1100
1200
110100
Number Of E qual Amplitude H alf Cycle Cur r ent P uls es (N)
Peak Half S ine Wave On-state Current (A)
T50RIA.. Series
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any R ated Load Condition And With
R ated V Applied Following S urge.
RRM
J
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
P eak Half S ine Wave On-s tate Current (A)
Pulse Train Duration (s)
Maximum Non R epetitive S urge Cur rent
Vers us Pulse T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T = 125 C
No Voltage Reapplied
R ated V R eapplied
RRM
J
T 50R IA.. S eries
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25 C
J
Ins tantaneous On-s tate Current (A)
Ins tantaneous On-s tate Voltage (V)
T 50R IA.. S eries
T = 125 C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 C
Tj=125 C
Tj=-40 C
(1) (2)
Ins tantaneous Gate Current (A)
Ins tantaneous Gate Voltage (V)
a) R ecommended load line for
b) R ecommended load line for
R ectangular gate pulse (1) P GM = 10W, tp = 5ms
(2) P GM = 20W, tp = 2ms
(3) P GM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500 s
<=30% rated di/dt : 20V, 65ohms
tr=1 s , tp>=6 s
T 50R IA.. S eries F requency L imited by PG(AV)
rated di/dt : 20V, 30ohms ;
tr=0.5 s, tp>=6 s
(3) (4)
T..RIA Series
7
Bulletin I27105 rev. B 02/02
www.irf.com
Fig. 15 - On-state Power Loss Characteristics
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100120
DC
30
60
90
120
180
Average On-s tate Current (A)
Maximum Allowable Case T emperature ( C)
Conduction Period
T 70R IA.. S eries
R (DC) = 0.50 K/W
thJC
0 20406080100120
Maximum Allowable Ambient T emperature ( C)
R = 0.1 K/W - Delta R
thSA
0.3 K/
W
0.7 K/
W
0.5 K/
W
1 K/W
1.5 K/W
2 K/
W
3 K/
W
5 K/
W
7 K/
W
0
10
20
30
40
50
60
70
80
90
100
0 10203040506070
RMS Limit
Conduction Angle
180
120
90
60
30
Maximum Average On-s tate P ower L os s (W)
Average On-s tate Current (A)
T 70R IA.. S eries
T = 125 C
J
020406080100120
Maximum Allowable Ambient T emperature ( C)
5 K/
W
3 K/
W
2 K/
W
1.5 K/
W
1 K/W
0.7 K/
W
0.5 K/W
0.3 K/
W
R = 0.1 K/W - Delta R
thSA
0
20
40
60
80
100
120
140
0 20406080100120
DC
180
120
90
60
30
RMS Limit
Conduction P eriod
Maximum Average On-s tate P ower L os s (W)
Average On-s tate Current (A)
T 70R IA.. S eries
T = 125 C
J
Fig. 18 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
30 60 90 120 180
Average On-s tate Current (A)
Maximum Allowable Cas e T emperature ( C)
Conduction Angle
T 70R IA.. S eries
R (DC) = 0.50 K/W
thJC
T..RIA Series
8
Bulletin I27105 rev. B 02/02
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Fig. 19 - Gate Characteristics
Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current
Fig. 10 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
110100
Number Of E qual Amplitude H alf Cycle Cur rent P uls es (N)
Peak Half S ine Wave On-state Current (A)
T 70R IA.. S eries
At Any R ated Load Condition And With
R ated V Applied F ollowing S urge.
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
RRM
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
0.01 0.1 1
P eak H alf S ine Wave On-s tate Current (A)
Pulse Train Duration (s)
Maximum Non R epetitive S urge Current
Vers us Pulse T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T = 125 C
No Voltage Reapplied
R ated V R eapplied
RRM
J
T 70R IA.. S eries
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5 4
T = 25 C
J
Ins tantaneous On-s tate Current (A)
Ins tantaneous On-s tate Voltage (V)
T70RIA.. Series
T = 125 C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 C
Tj=125 C
Tj=-40 C
(1) (2)
Instantaneous Gate Current (A)
Ins tantaneous Gate Voltage (V)
a) R ecommended load line for
b) R ecommended load line for
R ectangular gate pulse
T 70R IA.., T 90R IA.. S eries F requency Limited by PG(AV)
tr=1 s , tp>=6 s
rated di/dt : 20V, 20ohms;
tr=0.5 s , tp>=6 s
<=30% rated di/dt : 15V, 40ohms
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300 s
(3) (4)
T..RIA Series
9
Bulletin I27105 rev. B 02/02
www.irf.com
Fig. 29 - On-state Power Loss Characteristics
Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100120140160
DC
30
60
90
120
180
Average On-s tate Curr ent (A)
Maximum Allowable Cas e T emperature ( C)
Conduction P eriod
T 90R IA.. S eries
R (DC) = 0.38 K/W
thJ C
0 20406080100120
Maximum Allowable Ambient T emperature ( C)
R = 0.1 K/W - Delta R
thSA
0.3 K/
W
0.5 K/W
0.7 K/
W
1 K/W
1.5 K/W
2 K/
W
3 K/W
0
20
40
60
80
100
120
140
0 102030405060708090
RMS Limit
Conduction Angle
180
120
90
60
30
Maximum Aver age On-s tate P ower L os s (W)
Average On-s tate Current (A)
T90RIA Series
T = 125 C
J
0 20406080100120
Maximum Allowable Ambient T emperature ( C)
R = 0.1 K/
W - Delta R
thSA
0.3 K/
W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
2 K/
W
0
20
40
60
80
100
120
140
160
180
0 20406080100120140160
DC
180
120
90
60
30
RMS Limit
Conduction P eriod
Maximum Average On-s tate P ower L os s (W)
Average On-s tate Current (A)
T 90R IA.. S eries
T = 125 C
J
Fig. 29 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100
30 60 90 120 180
Average On-s tate Current (A)
Maximum Allowable Cas e T emperatur e ( C)
Conduction Angle
T 90R IA.. S eries
R (DC) = 0.38 K/W
thJ C
T..RIA Series
10
Bulletin I27105 rev. B 02/02
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Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current
Fig. 21 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Number Of E qual Amplitude H alf Cycle Cur rent P uls es (N)
Peak Half S ine Wave On-state Current (A)
T 90R IA.. S eries
At Any R ated Load Condition And With
R ated V Applied F ollowing S urge.
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
0.01 0.1 1
P eak Half S ine Wave On-s tate Current (A)
Pulse Train Duration (s)
Maximum Non R epetitive S urge Current
Vers us Pulse T rain Duration. Control
Of Conduction May Not B e Maintained.
Initial T = 125 C
No Voltage R eapplied
R ated V R eapplied
RRM
J
T 90R IA.. S eries
1
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5
T = 25 C
J
Ins tantaneous On-s tate Current (A)
Ins tantaneous On-s tate Voltage (V)
T 90R IA.. S eries
T = 125 C
J
0.01
0.1
1
0.001 0.01 0.1 1 10 100
S quare Wave Pulse Duration (s )
th J C
T ransient T hermal Impedance Z (K/W)
Steady State Value
R = 0.65 K/W
R = 0.50 K/W
R = 0.38 K/W
(DC Operation)
thJ C
thJ C
thJ C
T 50R IA.. S eries
T 70R IA.. S eries
T 90R IA.. S eries
Fig. 34 - Thermal Impedance Z thJC Characteristics
T..RIA Series
11
Bulletin I27105 rev. B 02/02
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
