Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) N-Channel = > 1000V 800mA 21 TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25C to 150C VGSX Maximum Ratings 1000 V Continuous 20 V VGSM Transient 30 V PD TC = 25C 60 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 25A 1000 VGS(off) VDS = 25V, ID = 25A - 2.0 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS= - 5V RDS(on) VGS = 0V, ID = 400mA, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 4.0 V Advantages V * Easy to Mount * Space Savings * High Power Density 50 nA 1 A 15 A TJ = 125C (c) 2009 IXYS CORPORATION, All Rights Reserved 21 800 * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification mA Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100182A(12/09) IXTY08N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 330 VDS = 30V, ID = 400mA, Note 1 Ciss Crss td(on) mS 325 pF 24 pF 6.5 pF 28 ns 57 ns 34 ns 48 ns 14.6 nC 1.2 nC 8.3 0.50 Resistive Switching Times tr VGS = 5V, VDS = 500V, ID = 400mA td(off) RG = 10 (External) tf Qg(on) Qgs VGS = 5V, VDS = 500V, ID = 400mA Qgd RthJC RthCS TO-220 TO-252 AA (IXTY) Outline 560 VGS = -10V, VDS = 25V, f = 1MHz Coss Millimeter Min. Max. Inches Min. Max. nC A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 2.08 C/W C/W A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 Characteristic Values Min. Typ. Max. Test Conditions SOA VDS = 800V, ID = 45mA, TC = 75C, Tp = 5s Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 36 W Characteristic Values Min. Typ. Max. VSD IF = 800mA, VGS = -10V, Note 1 trr IRM QRM IF = 800mA, -di/dt = 100A/s VR = 100V, VGS = -10V 0.8 1. Gate 2. Drain 3. Source Dim. Safe-Operating-Area Specification Symbol IXTA08N100D2 IXTP08N100D2 1.3 1.03 7.40 3.80 V e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 (IXTP) Outline s A C Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Fig. 1. Output Characteristics @ T J = 25C 0.8 Fig. 2. Extended Output Characteristics @ T J = 25C 2.2 VGS = 5V 2V 1V 0.7 1.8 0.6 1.6 0V 0.5 ID - Amperes ID - Amperes VGS = 5V 2V 1V 2.0 0.4 -1V 0.3 1.4 1.2 0V 1.0 0.8 -1V 0.6 0.2 0.4 -2V 0.1 -2V 0.2 0.0 0.0 0 2 4 6 8 10 12 14 0 10 20 30 Fig. 3. Output Characteristics @ T J = 125C 60 70 80 1E-01 VGS = 5V 1V VGS = - 3.00V 1E-02 - 3.25V 0V 0.6 0.5 -1V ID - Amperes ID - Amperes 50 Fig. 4. Drain Current @ T J = 25C 0.8 0.7 40 VDS - Volts VDS - Volts 0.4 0.3 0.2 1E-03 - 3.50V 1E-04 - 3.75V 1E-05 - 4.00V 1E-06 - 4.25V 1E-07 - 4.50V -2V 0.1 -3V 0.0 1E-08 0 5 10 15 20 25 30 0 100 200 300 400 VDS - Volts 500 600 700 800 900 1000 1100 1200 VDS - Volts Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ T J = 100C 1.E+11 1.E-01 VDS = 700V - 100V 1.E+10 VGS = -3.25V 1.E-02 -3.50V -3.75V -4.00V 1.E-04 R O - Ohms ID - Amperes 1.E+09 1.E-03 1.E+08 TJ = 25C 1.E+07 -4.25V 1.E-05 -4.50V 1.E-06 TJ = 100C 1.E+06 1.E+05 0 100 200 300 400 500 600 700 800 VDS - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 VGS - Volts -3.4 -3.2 -3.0 -2.8 IXTY08N100D2 Fig. 8. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 VGS = 0V 2.2 VGS = 0V 2.4 5V - - - - I D = 0.4A 2.2 R DS(on) - Normalized R DS(on) - Normalized IXTA08N100D2 IXTP08N100D2 1.8 1.4 1.0 2.0 TJ = 125C 1.8 1.6 1.4 1.2 1.0 0.6 0.8 0.2 TJ = 25C 0.6 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 TJ - Degrees Centigrade 0.8 1.0 1.2 1.4 1.6 ID - Amperes Fig. 10. Transconductance Fig. 9. Input Admittance 1.4 1.2 VDS = 30V VDS = 30V 1.2 1.0 TJ = - 40C 0.8 25C g f s - Siemens ID - Amperes 1.0 0.8 TJ = 125C 25C - 40C 0.6 0.4 0.4 0.2 0.2 0.0 -4.0 125C 0.6 0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0.0 0.2 0.4 VGS - Volts Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 0.8 1.0 1.2 1.4 Fig. 12. Forward Voltage Drop of Intrinsic Diode 2.8 1.3 VGS = -10V 2.4 1.2 VGS(off) @ VDS = 25V 2.0 IS - Amperes BV / VGS(off) - Normalized 0.6 ID - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 1.6 1.2 TJ = 125C TJ = 25C 0.8 0.9 0.4 0.0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 1,000 Capacitance - PicoFarads Ciss 4 VDS = 500V 3 I G = 1mA I D = 400mA 2 VGS - Volts 100 Coss 10 1 0 -1 -2 -3 Crss -4 f = 1 MHz -5 1 0 5 10 15 20 25 30 35 0 40 2 4 VDS - Volts 8 10 12 14 16 QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 10.00 10.00 RDS(on) Limit RDS(on) Limit 25s 100s 1ms 10ms 100ms 0.10 1.00 ID - Amperes 1.00 ID - Amperes 6 25s 100s 1ms 0.10 10ms DC TJ = 150C 100ms TJ = 150C TC = 25C Single Pulse DC TC = 75C Single Pulse 0.01 0.01 10 100 1,000 10 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance Z (th)JC - C / W 10.0 1.0 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N100D2(1C)8-25-09