IGBT MODULE PDMB400B12 Dual 400A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PDMB400B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 400 800 1900 -40 to +150 -40 to +125 2500 V V W C C V FTOR 3 N*m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 1.9 33000 0.25 0.40 0.25 0.80 8.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=400A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.5 ohm RG= 1.0 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic s Unit 400 800 A Symbol Test Condition Min. Typ. Max. VF trr IF=400A,VGE=0V IF=400A,VGE=-10V,di/dt=800A/s - 1.9 0.20 2.4 0.30 Unit V s Test Condition Min. Typ. Max. Unit Junction to Case - - 0.065 0.12 C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA A V V pF Symbol IGBT DIODE Rth(j-c) http://store.iiic.cc/ PDMB400B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 VGE =20V 12V IC=200A 15V Collector Current I C (A) 600 9V 400 8V 200 7V 0 0 2 TC=25 16 10V Collector to Emitter Voltage V CE (V) 800 4 6 8 14 400A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 700 14 600 12 500 10 400 8 VCE =600V 300 6 400V 200 4 200V 100 2 0 20 0 500 1000 1500 2000 2500 Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 50000 Cies Coes 5000 2000 Cres 1000 tOFF 0.8 tf 0.6 0.4 0.2 500 0.1 0.2 0.5 1 2 5 10 20 50 100 200 VCC=600V RG= 1 VGE=15V TC=25 1 Switching Time t (s) 10000 0 3000 1.2 VGE=0V f=1MHZ TC=25 20000 Capacitance C (pF) 16 RL=1.5 TC=25 Gate to Emitter Voltage V GE (V) 100000 200 20 tON tr 0 0 Collector to Emitter Voltage V CE (V) 100 200 Collector Current IC (A) http://store.iiic.cc/ 300 400 Gate to Emitter Voltage V GE (V) 400A 0 16 800 800A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 I C=200A 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 16 800A PDMB400B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) (Typical) 800 10 VCC=600V IC=400A VGE =15V TC=25 TC=25 toff ton 2 tr 1 tf 0.5 0.2 0.1 0.05 600 500 400 300 200 100 0.5 1 2 5 10 20 0 50 0 1 2 3 4 Forward Voltage V F (V) Series Gate Impedance R G () Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 5000 1000 I F=400A TC=25 RG=1 VGE=15V TC125 2000 1000 500 500 300 Collector Current I C (A) trr 200 100 50 I RrM 200 100 50 20 10 2 1 0.5 20 0.2 400 800 1200 1600 2000 0.1 2400 0 400 800 Fig.11- Transient Thermal Impedance 1 5x10 -1 2x10 -1 FRD 1x10 -1 IGBT 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 TC=25 5x10 -4 1 Shot Pulse 2x10 -4 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) (/W) 0 (J-C) 10 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125 700 Forward Current I F (A) Switching Time t (s) 5 10 -4 10 -3 10 -2 Time t (s) http://store.iiic.cc/ 10 -1 1 10 1 1600