2008-04-11
1
BC817.../BC818...
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types:
BC807.../W, BC808.../W (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BC817-16
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
BC817K-25W*
BC817-40
BC817K-40*
BC817-40W
BC817K-40W*
BC818-16W
BC818K-16W*
BC818-25
BC818K-25*
BC818-40
BC818K-40*
6As
6As
6Bs
6Bs
6Bs
6Bs
6Cs
6Cs
6Cs
6Cs
6Es
6Es
6Fs
6Fs
6Gs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
SOT23
SOT23
SOT323
SOT323
SOT23
SOT23
SOT323
SOT323
SOT323
SOT323
SOT23
SOT23
SOT23
SOT23
* Shrinked chip version
1Pb-containing package may be available upon special request
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2008-04-11
2
BC817.../BC818...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BC817...
BC818...
VCEO
45
25
V
Collector-base voltage
BC817...
BC818...
VCBO
50
30
Emitter-base voltage VEBO 5
Collector current IC500 mA
Peak collector current ICM 1000
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 79 °C, BC817, BC818
TS ≤ 115 °C, BC817K, BC818K
TS ≤ 130 °C, BC817W/KW, BC818...W/KW
Ptot
330
500
250
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BC817, BC818
BC817K, BC818K
BC817W/KW, BC818W/KW
RthJS
≤ 215
≤ 70
≤ 80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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2008-04-11
3
BC817.../BC818...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC817...
IC = 10 mA, IB = 0 , BC818...
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC817...
IC = 10 µA, IE = 0 , BC818...
V(BR)CBO
50
30
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - - V
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp.16
IC = 100 mA, VCE = 1 V, hFE-grp.25
IC = 100 mA, VCE = 1 V, hFE-grp.40
IC = 300 mA, VCE = 1 V, hFE-grp.162)
IC = 300 mA, VCE = 1 V, hFE-grp.252)
IC = 300 mA, VCE = 1 V, hFE-grp.402)
IC = 500 mA, VCE = 1 V, all hFE-grps.3)
hFE
100
160
250
60
100
170
40
160
250
350
-
-
-
-
250
400
630
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
2For all BC817 and BC818 subtypes
3For all BC817K and BC818K subtypes
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2008-04-11
4
BC817.../BC818...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz1)
VCB = 10 V, f = 1 MHz2)
Ccb
-
-
6
3
-
-
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz1)
VEB = 0.5 V, f = 1 MHz2)
Ceb
-
-
60
40
-
-
1For all BC817 and BC818 subtypes
2For all BC817K and BC818K subtypes
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2008-04-11
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BC817.../BC818...
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.16
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.25
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.40
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00223BC 817/818
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
˚C
-50
25
˚C
150
˚C
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2008-04-11
6
BC817.../BC818...
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
103
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
BC817, BC818: - - - , BC817K, BC818K: __
_
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
50
55
60
pF
75
CCB/CEB
CEB: BC817/BC818
CEB: BC817K/BC818K
CCB: BC817/BC818
CCB: BC817K/BC818K
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2008-04-11
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BC817.../BC818...
Total power dissipation Ptot = ƒ(TS)
BC817, BC818: - - - , BC817K, BC818K: __
_
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
mW
550
Ptot
BC817K, BC818K
BC817, BC818
Total power dissipation Ptot = ƒ(TS)
BC817W/KW, BC818W/KW
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
mW
550
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC817, BC818
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
4
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
BC817, BC818
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
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2008-04-11
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BC817.../BC818...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC817K, BC818K
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TP
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
BC817/K, BC818/K
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TP
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Puls Load RthJS = ƒ (tp)
BC817W/KW, BC818W/KW
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC817W/KW, BC818W/KW
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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2008-04-11
9
BC817.../BC818...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
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2008-04-11
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BC817.../BC818...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
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2008-04-11
11
BC817.../BC818...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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