1N3595
1N3595, Rev. A
1N3595
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2002 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 150 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage IR = 100 µA 150 V
VF Forward Voltage IF = 1.0 mA
IF = 5.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
0.52
0.60
0.65
0.75
0.79
0.83
0.68
0.75
0.80
0.88
0.92
1.00
V
V
V
V
V
V
IR Reverse Current VR = 125 V
VR = 30 V, TA = 125°C
VR = 125 V, TA = 125°C
VR = 125 V, TA = 150°C
1
0.3
0.5
3
nA
µA
µA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 8 pF
trr Reverse Recovery Time IF = 10 mA, VR = 3.5 V,
RL = 1.0 k 3
µs
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