G E SOLID STATE Ob ve 3475081 0017280 3 I 3875081 GE SOLID STATE O1E 17280 =p T- 3327 Darlington Power Transistors _ BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693 / 10-Ampere N-P-N Darlington | Power Transistors 45-60-80-100-120 Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A (BD X33, BDX33A) e Gain of 750 at 3 A (BDX33B, BDX33C, BDX33D) cl | ad (FLANGE/ QE ptt Features: , Applications: __}+= Operates from IC without predriver # Power switching Top VIEW scs-asecs Low leakage at high temperature = Hammer drivers @ Series and shunt JEDEC TO-220A8 regulators . = Audio amplifiers The RCA-BDX33, BDX33A, BDX33B, BDX330, and BDX33D are monolithic silicon Darlington transistors designed for low- and medium-frequency power applications, The high gain of these devices makes It possible for them to be driven directly from integrated circuits. The BDX33, BDX33A, BDX33B, and BDX33C are comple- mentary to the BDX34, BDX34B, and BDX34C, described in File 694, These devices are supplied In the JEDEC TO-220AB (VER- pesrnoeatt SAWATT) plastic package. Fig. 1 - Schematic diagram for all types. MAXIMUM RATINGS, Adsolute-Maximum Values: BOX33 BDX33A BDX33B BDX33C BDX33D Vepo- tt AB 60 80 100 120 v Veertsus) . (Rag) = 100.2 45 60 80 100 120 Vegotush 2 ee ee ee eB 60 80 100 120 Vv Voex (sus) VaptUSV 2 ee ee ee 4B 60 Bo 100 120 v VEBO; et 6 5 5 5 5 v - We ee ee 10 10 10 10 10 - A Ige ee wee ew ee 0.25 0.25 0.25 0,25 0,25 A Py - TeSBC Dee ee TO 70 70 70 70 Ww Te >eC . ee Derate linearly 0.56 wi'c TstgeTy + 651041590 _____. c Th At distances = 1/B in, (3,17 mm) from case for10smax. . . ee ke 235 c 282 0822 C-05G E SOLID STATE o1 deff sa7soar ooizea1 s Bf 3875081 G E SOLID STATE ~O1E 17281. oT S4B29 Darlington Power Transistors BDX33, BDX33A, BDX33B, BDX33C, BDX33D ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specitied TEST CONDITIONS LIMITS vottace | CUR: . CHARACTERISTIC Vd RENT| BDX33 {| BDX33A | BDX33B | UNITS . Ade Veep] Vce| Vee} 'c Min.| Max.| Min4 Max.| Min.| Max. 40 -/| -}| -]| -] -| 05 IcEO 30 - - - 0.5 ~ - 20 -~|os| -j -}| -] - 40 -| -]| -/| -]| =| 10 Te= 100C 30 -| -| -{ 10] -] - 80 -|-| -]| -] - i IcBo 60 - - - Ti - - 45 - af-| -J-]e 80 -| -{-]| -] - 5 Tc = 100C 60 -}-] - 51 -] - 45 - -~| -j] -|- feBo 5| 0 ~| 10] -} 10] =] 10 mA Vceolsus) 0.18 45) - | 6ol ~ | so) Veeaisus) a (Reg) = 1002 0.1 45] - | 60 80 Vv Vcevisus) -1,5]0.18 45} | 60} - | 80] - h 3 3a -|--{- |] - {| 750] - FE 3 4a 750| | 750) - | - | - 3 3a ~{| -|-}| -] -] 25 VBE 3 4a |25| -~| 25] -] - V Vee (sat) Ig = 0.006 3a -}|~j-]-] -]25 V Ig = 0.008 4a | 265] -| 25} -| - Ve 8 - 4{ - 4} - 4 Vie fe fet kHe 5 1 1000] ~ |1000) - |1000] Ihggl te LOMH2 5 1 20} - | 20] | 20} - Isfp 25 2.8} | 28] ~ | 28) - A tp = 0.5 snon-rep. 36 W- Wo- W-, Raje - 11.78) - [1.78] }1.78 | cfw 4 Pulsed: Pulse duration = 300 us, duty factor = 1.8%, 283 0823 c-06ar G E SOLID STATE O04 deff 3a75081 oo1zese ? 9 3875081 GE SOLID STATE OTE 17282 op 133 27 Darlington Power Transistors BDX33, BDX33A, BDX33B, BDX33C, BDX33D ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS . CHARACTERISTIC VOLTAGE | CURRENT) Gyxa3 | BDX33D | UNITS | Vdc Adc Vos! Vcel Veel ic lg Min.|Max.| Min.|Max. ; 60 ) ~| -| -|05 } CEO 50 0 -{1o5| -| - 60 0 -/{[-|f|-1| 10 Tc = 100C Cc 50 0 -~ | wf} | - mA 120 -j}-|- 1 CBO 100 -| af -|[- tan? 120 -}|-]- 5 Tc = 100C 100 _ 5} | _ leBo 510 - | 10} | 10 mA Vogolsus) 0.14]; 0 100] | 120) - Veerlsus) (Rge) = 1002 0.14 100} | 120) - Vv Vog visus) 1,5}0,18 100} | 120] - here 3 3a 750| 750) VeE 3 3a ~ | 25) - 12.5 Vv Vcelsat) 32 ]0,006| - | 25] | 2.5 Vv Ve 8 - 4} - 4 , hte { fot kHe 5 1 1e00} - |1000} - Ihgel f=1.0MHe 5 1 20; - | 20] - Is/p 25 28] - | 28] - 7 tp= 0.5s non-rep. 36 1] - ly - Rgsc - |.78| - }i.78 | C @ Pulsed: Pulse duration = 300 ps, duty factor = 1.8%, 284 __ 0824 C=07G E SOLID STATE 3875081 GE SOLID STATE 01 def aa7soan oo1zeaa 9 ff | f OIE 17283 D Tt Ss'2? Varlington Power Transistors 0825 BDX33, BDX33A, BDX33B, BDX33C, BDX33D MUST BE (MAX.) #60V (BOX33A) (MAX.) =80V (BOX338) VcEo (MAX.) 100 ( Veo (MAX.) #120 V 4 6 46 sol l2zo 2 4 68 100 COLLECTOR~TO-EMITTER VOLTAGE (Vce)V 92CS~29503RI Fig. 2. Maximum operating areas for BDX33-series typas. NOTE: CURRENT OERATING AT VOUTACE ONLY TO THE LIMITED PORTION AND THE Isp PORTION OF MAXIMUM OPERATING AREA SUAVE, 00 NOT CERATE THE SPECIFIED VALUE FOR Tq MAX PERCENTAGE OF MAXIMLNA DISSIPATION AT Tet 25C OR PERCENTAGE OF RATED CURRENT AT SPECIFIED VOLTAGE CASE TEMPERATURE Lic] "C 928-20696m1 Fig. 3 Derating curve for all types. Cc-08 } TO- EMITTER VOLTAGE ev ot loo 1 io COLLECTOR CURRENT (I)~A 92CS~- 20697R2 Fig. 4 Typleal dc-beta characteristics for all types. 285G E SOLID STATE ou deff se7soa1 ooizeay o 3875081 GE SOLID STATE Darlington Power Transistors O1E 17284 DIT-BB-29 BDX33, BDX33A, BDX33B, BDX33C, BDX33D CURRENT ia VOLTAGE (Ve_g)*5 CASE TEMPERATURE (T]225C ? & Zz $ 5 z @ = 5 & Z z 3 a i 4 3 3 & oO FREQUENCY (1) MHz a2cs-19019 Fig. 5 Typical small-signal gain for all types. . CASE TEMPERATURE (1c)*25 Ren pe < . 4 . 3 % = 3 3 8 G z 4 6 6 [) 12 14 COLLECTOR-TO-EMITTER VOLTAGE tegl- g2ch-15925, Fig. 7 Typical output characteristics for all types, CASE TEMPERATURE ITo dF 25C INOUCTANCE [L)#12 mW BASE-TO-EMITTER RESISTANCE [Agel 00 3 aaa See [srretesteh ofS SS FT eee o ' 2 3 4 3 BASE-TO-EMITTER VOLTAGE Wg Vv 9205-20694 Fig. 9 Typical saturation characteristics for all types. COLLECTOR-TO-ENITTER VOLTAGE {Vcel3 BASE -YO-EMITTER VOLTAGE (VgeiV 92C$-20700R) Fig. 6 Typical Input characteristics for all types. COLLECTOR=TO-ENITTER VOLTAGE (Voge)? 3 cE z a x = > 3 a 5 - 9 a 4 3 3 3 GASE-TO-EMITTER VOLTAGE (Vgel}-V S2C5+20701Rt Fig. 8 Typical transfer characteristics for all types. UTEKTRONIX MODEL No. 543A, Input . OR EQUIVALENT} CHAQNETICS PULSE =- 18)" GENERATOR MODEL _ Wo. PG~31, OR *y,, EQUIVALENT Tee OEVICE = yeger rest PULSE DURATION Rg 200 Ae 20 8 POSITIVE VOLTAGE 20 wa NEGATIVE VOLTAGE REP, RATE 200 He * Is, ANO Tg2 ARE MEASURED WITH TEKTRONIX CURRENT PROBE PGOI9 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 9208-22702 Fig. 10 Circuit used to measure saturated switching times. . 286 _ , 0826 c-09re G E SOLID STATE 01 deff 3a7soai oorz2as 2 Te oa De RSF 3875081 GE SOLID STATE D1E 17285, Dood raeae BDX33, BDX33A, BDX33B, BDX33C, BDX33D al " ! ___ THE . yr fa] 7 ecco os ' lo COLLECTOR CUARENT [1)A COLLECTOR CURRENT | | - 92C$-19920R1 Fig. 11 Typical saturated switching-time characteristics for all types, TURN = ON TIME +t TIME OUTPUT WAVE FORM P2CS-ISTERT Fig. 12 Phase relationship batween input current and output current showing reference points for specifications of switching times (test circuit shown in Fig. 13). - 287 0827 Cc-10