October 2007 Rev 2 1/16
16
STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PA K
STripFET™ Power MOSFET
Features
Ultra low on-resistance
100% Avalanche tested
Application
Switching applications
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of ST’s
STripFET™ process. The resulting transistor
shows extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
(max.) ID
STB160N75F3 75V 3.7 m120 A(1)
1. Current limited by package
STP160N75F3 75V 4 m120 A(1)
STW160N75F3 75V 4 m120 A(1)
123
TO-220 TO-247
1
3
D²PAK
123
Table 1. Device summary
Order codes Marking Package Packaging
STB160N75F3 160N75F3 D²PAK Tape & reel
STP160N75F3 160N75F3 TO-220 Tube
STW160N75F3 160N75F3 TO-247 Tube
www.st.com
Contents STB160N75F3 - STP160N75F3 - STW160N75F3
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 75 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package
Drain current (continuous) at TC = 25°C 120 A
ID (1) Drain current (continuous) at TC = 100°C 120 A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 480 A
PTOT Total dissipation at TC = 25°C 330 W
Derating factor 2.2 W/°C
dv/dt (3)
3. ISD < 120A, di/dt < 1100 A/µs, VDD < 60V, TJ < TJMAX
Peak diode recovery voltage slope 20 V/ns
EAS (4)
4. Starting TJ = 25°C, ID = 60A, VDD = 25V
Single pulse avalanche energy 600 mJ
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
TO-220 TO-247 D²PAK
Rthj-case Thermal resistance junction-case max 0.45 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 -- °C/W
Rthj-pcb(1)
1. When mounted on 1 inch² FR4 2 oz Cu
Thermal resistance junction-pcb -- -- 50 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250µA, VGS= 0 75 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating,
VDS = Max
rating,@125°C
10
100
µA
µA
IGSS
Gate body leakage
current (VDS = 0) VGS = ±20V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 24V
RDS(on)
Static drain-source on
resistance VGS= 10V, ID= 60A
TO-220
TO-247
D²PAK
3.5
3.2
4
3.7
m
m
Table 5. Dynamic
Symbol Parameter Te st conditions Min Typ Max Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
6750
1080
40
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=37.5V, ID = 120A
VGS =10V
(see Figure 16)
85
27
26
nC
nC
nC
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics
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Table 6. Switching times
Symbol Parameter Test conditions Min. Ty p. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=37.5 V, ID= 60A,
RG=4.7Ω, VGS=10V,
(see Figure 18)
22
65
100
15
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse with limited by safe operating area
Source-drain current
Source-drain current (pulsed)
120
480
A
A
VSD(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD=120A, VGS=0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, VDD= 20 V,
di/dt = 100 A/µs, Tj=25°C
(see Figure 17)
70
150
4.2
ns
nC
A
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
TO-247
Figure 3. Thermal impedance for TO-220 /
TO-247
Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics
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Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3
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Figure 14. Source-drain diode forward
characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3 Test circuit
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3 Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data
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TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.490.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3
12/16
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5.50 0.216
TO-247 MECHANICAL DATA
STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data
13/16
D²PAK mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.4 4.6 0.1730.181
A1 2.492.690.098 0.106
A2 0.030.230.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.231.36 0.0480.053
D8.959.350.352 0.368
D1 80.315
E 10 10.4 0.393 0.409
E1 8.5 0.334
G4.88 5.280.192 0.208
L15 15.85 0.590 0.625
L2 1.27 1.4 0.50 0.55
L31.4 1.75 0.055 0.68
M2.4 3.2 0.0940.126
R 0.4 0.015
V2
Packaging mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3
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5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STB160N75F3 - STP160N75F3 - STW160N75F3 Revision history
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6 Revision history
Table 8. Document revision history
Date Revision Changes
07-Feb-2007 1 First release
02-Oct-2007 2 New section has been added: Electrical characteristics (curves)
STB160N75F3 - STP160N75F3 - STW160N75F3
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