1N5221C~1N5267C
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristi c
3. Low reverse current level
4. VZ-tolerance±2%
Applications
Voltage st abil ization
Absolute Maximum Ratings
Tj=25 Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb75 P
V500 mW
Z-current IZPV/VZmA
Junction temperature Tj200
Storage temperature range Tstg -65~+200
Maximum Thermal Resistance
Tj=25 Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) T L=constant RthJA 300 K/W
Stresses exceeding maximum rati ngs may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25 Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.1 V
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1N5221C~1N5267C
VZnom1) IZT for r
zjT rzjK at I
ZK IR at VRTKVZ
Type V mA Ω Ω mA μA V %/K
1N5221C 2.4 20 <30 <1200 0.25 <100 1.0 <-0.085
1N5222C 2.5 20 <30 <1250 0.25 <100 1.0 <-0.085
1N5223C 2.7 20 <30 <1300 0.25 <75 1.0 <-0.080
1N5224C 2.8 20 <30 <1400 0.25 <75 1.0 <-0.080
1N5225C 3.0 20 <29 <1600 0.25 <50 1.0 <-0.075
1N5226C 3.3 20 <28 <1600 0.25 <25 1.0 <-0.070
1N5227C 3.6 20 <24 <1700 0.25 <15 1.0 <-0.065
1N5228C 3.9 20 <23 <1900 0.25 <10 1.0 <-0.060
1N5229C 4.3 20 <22 <2000 0.25 <5 1.0 <+0.055
1N5230C 4.7 20 <19 <1900 0.25 <5 2.0 <+0.030
1N5231C 5.1 20 <17 <1600 0.25 <5 2.0 <+0.030
1N5232C 5.6 20 <11 <1600 0.25 <5 3.0 <+0.038
1N5233C 6.0 20 <7 <1600 0.25 <5 3.5 <+0.038
1N5234C 6.2 20 <7 <1000 0.25 <5 4.0 <+0.045
1N5235C 6.8 20 <5 <750 0.25 <3 5.0 <+0.050
1N5236C 7.5 20 <6 <500 0.25 <3 6.0 <+0.058
1N5237C 8.2 20 <8 <500 0.25 <3 6.5 <+0.062
1N5238C 8.7 20 <8 <600 0.25 <3 6.5 <+0.065
1N5239C 9.1 20 <10 <600 0.25 <3 7.0 <+0.068
1N5240C 10 20 <17 <600 0.25 <3 8.0 <+0.075
1N5241C 11 20 <22 <600 0.25 <2 8.4 <+0.076
1N5242C 12 20 <30 <600 0.25 <1 9.1 <+0.077
1N5243C 13 9.5 <13 <600 0.25 <0.5 9.9 <+0.079
1N5244C 14 9.0 <15 <600 0.25 <0.1 10 <+0.082
1N5245C 15 8.5 <16 <600 0.25 <0.1 11 <+0.082
1N5246C 16 7.8 <17 <600 0.25 <0.1 12 <+0.083
1N5247C 17 7.4 <19 <600 0.25 <0.1 13 <+0.084
1N5248C 18 7.0 <21 <600 0.25 <0.1 14 <+0.085
1N5249C 19 6.6 <23 <600 0.25 <0.1 15 <+0.086
1N5250C 20 6.2 <25 <600 0.25 <0.1 16 <+0.086
1N5251C 22 5.6 <29 <600 0.25 <0.1 17 <+0.087
1N5252C 24 5.2 <33 <600 0.25 <0.1 18 <+0.088
1N5253C 25 5.0 <35 <600 0.25 <0.1 19 <+0.089
1N5254C 27 4.6 <41 <600 0.25 <0.1 21 <+0.090
1N5255C 28 4.5 <44 <600 0.25 <0.1 21 <+0.091
1N5256C 30 4.2 <49 <600 0.25 <0.1 23 <+0.091
1N5257C 33 3.8 <58 <700 0.25 <0.1 25 <+0.092
1N5258C 36 3.4 <70 <700 0.25 <0.1 27 <+0.093
1N5259C 39 3.2 <80 <800 0.25 <0.1 30 <+0.094
1N5260C 43 3.0 <93 <900 0.25 <0.1 33 <+0.095
1N5261C 47 2.7 <105 <1000 0.25 <0.1 36 <+0.095
1N5262C 51 2.5 <125 <1100 0.25 <0.1 39 <+0.096
1N5263C 56 2.2 <150 <1300 0.25 <0.1 43 <+0.096
1N5264C 60 2.1 <170 <1400 0.25 <0.1 46 <+0.097
1N5265C 62 2.0 <185 <1400 0.25 <0.1 47 <+0.097
1N5266C 68 1.8 <230 <1600 0.25 <0.1 52 <+0.097
1N5267C 75 1.7 <270 <1700 0.25 <0.1 58 <+0.098
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL)at 30,
9.5mm(3/8”) from the diode body.
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1N5221C~1N5267C
Characteristics (Tj=25 unless otherwise specified)
Figure 1. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 2. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
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1N5221C~1N5267C
Figure 3. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
Figure 4. Thermal resistance from junction to ambient as a function of pulse duration
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1N5221C~1N5267C
Dimensions in mm
Type No.
Cathode identification
Φ2.0 max.
Φ0.55 max.
4.2 max. 26 min. 26 min.
Cathode Anode
1
5
N
2
Standard Glass Case
JEDEC DO-35
Marking
N
2
5
0
5
1
C
Excel Semiconductor
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