IXFK180N07 - LITTELFUSE - Datasheet.World

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 70V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 70 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C (Chip Capability) 180 A

IL(RMS) External Lead Current Limit 160 A

IDM TC= 25°C, Pulse Width Limited by TJM 720 A

IATC= 25°C 180 A

EAS TC= 25°C3J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns

PDTC= 25°C 568 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.

FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

HiperFETTM

Power MOSFETs

IXFK180N07

IXFX180N07

VDSS = 70V

ID25 = 180A

RDS(on) ≤≤

≤≤

≤ 6mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 250ns

DS98556D(10/12)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

Tab

G

DS

TO-264 (IXFK)

S

G

D

Tab

Features

zInternational Standard Packages

zAvalanche Rated

zLow Intrinsic Gate Resistance

zLow Package Inductance

zFast Intrinsic Rectifier

zLow RDS(on) and QG

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zTemperature and Lighting Controls

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 70 V

VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V

IGSS VGS = ±20V, VDS = 0V ±200 nA

IDSS VDS = VDSS, VGS = 0V 25 μA

TJ = 125°C 500 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6 mΩ

G

D

S

IXFK180N07

IXFX180N07

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain

3 - Source

PLUS 247TM Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA Outline

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 60A, Note 1 48 80 S

Ciss 11080 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 4540 pF

Crss 2500 pF

RGi Gate Input Resistance 0.74 Ω

td(on) 37 ns

tr 160 ns

td(off) 90 ns

tf 60 ns

Qg(on) 395 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC

Qgd 203 nC

RthJC 0.22 °C/W

RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 180 A

ISM Repetitive, Pulse Width Limited by TJM 720 A

VSD IF = 100, VGS = 0V, Note 1 1.3 V

trr 250 ns

QRM 1.2 μC

IRM 10 A

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

IF = 50A, -di/dt = 100A/μs

VR = 50V, VGS = 0V

IXFK180N07

IXFX180N07

Fi g . 1. Ou tp u t C h aracter i stics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

V

DS

- Vo lts

I

D

- Ampere s

V

GS

= 15V

10V

9V

8V

5V

7V

6V

Fi g . 3. Ou tp u t C h aracter i stics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

160

180

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V 7

V

4

V

5

V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 90A Valu e vs.

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 180A

I

D

= 90A

Fig. 5. R

DS(on)

No r mali z ed to I

D

= 90A Valu e vs.

Drain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

T

J

= 150ºC

T

J

= 25ºC

Fi g . 6. D r ai n Cu r r en t vs. C ase Temper atu re

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Ampere s

Ext er nal Lead Current Limit

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

012345678

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 15V

7V

5V

6V

10V

9V

8V

IXFK180N07

IXFX180N07

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- A mp eres

g

f s

- Siemens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

40

80

120

160

200

240

280

320

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amper es

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 50 100 150 200 250 300 350 400

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 35V

I

D

= 90A

I

G

= 10mA

Fi g . 11. C ap aci tan ce

1

10

100

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - NanoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maxi mu m Tr an si en t Ther mal Imped an ce

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXFK180N07

IXFX180N07

Fig. 13. Forward-Bias Safe Operating Area

@ T

C

= 25ºC

1

10

100

1,000

110100

VDS - V olt s

ID - Amp e re s

1ms

10ms

RDS(on) Limit

TJ = 150ºC

TC = 25ºC

Single Pulse

100ms

Ext er nal Lead Limit

DC

250µs

F i g . 14. F or war d-B ias Saf e Op er atin g Area

@ T

C

= 75ºC

1

10

100

1,000

110100

VDS - Volts

ID - Amp e re s

1ms

10ms

RDS(on) Limit

TJ = 150ºC

TC = 75ºC

Sing le Pulse

100ms

Ext er nal Lead Limit

DC

250µs

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