APT5016BFLL APT5016SFLL 500V 30A 0.160W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SFLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter APT5016 UNIT 500 Volts Drain-Source Voltage 30 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 325 Watts Linear Derating Factor 2.6 W/C VGSM PD TJ,TSTG 120 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 30 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 Volts 30 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.160 UNIT Ohms Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7026 Rev B 2-2002 Symbol APT5016 BFLL - SFLL DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 2833 3500 Coss 900 Output Capacitance VDS = 25V 600 Crss Reverse Transfer Capacitance f = 1 MHz 50 70 Qg Total Gate Charge VGS = 10V 72 110 Q gs Gate-Source Charge VDD = 0.5 VDSS Q gd Gate-Drain ("Miller ") Charge ID = ID [Cont.] @ 25C 16 42 20 70 VGS = 15V 10 20 t d(on) 3 Turn-on Delay Time tr VDD = 0.5 VDSS 9 18 ID = ID [Cont.] @ 25C 26 39 RG = 1.6 14 30 TYP MAX Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions 30 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current VSD Diode Forward Voltage dv/ MIN Peak Diode Recovery dt 1 2 dv/ 120 (Body Diode) dt (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 15 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 250 Tj = 125C 500 Qrr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 1.3 Tj = 125C 4.5 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 12 Tj = 125C 18 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT 0.38 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.89mH, R = 25, Peak I = 30A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% D=0.5 0.1 0.2 0.1 0.05 Note: 0.01 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7026 Rev B 2-2002 0.4 0.01 t1 t2 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 10 Typical Preformance Curves 80 Graph Deleted ID, DRAIN CURRENT (AMPERES) 8V 15 &10V 7.5V 60 7V 40 6.5V 20 6V 5.5V VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.1 VGS=10V 1.05 VGS=20V 1.0 0.95 0.9 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT I D = 0.5 I D V GS 1.05 1.00 0.95 0.90 0.85 -50 [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.15 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7005 Rev B 2-2002 ID, DRAIN CURRENT (AMPERES) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 APT5016 BFLL - SFLL 10,000 5,000 OPERATION HERE LIMITED BY RDS (ON) 1mS 10 TC =+25C TJ =+150C SINGLE PULSE D IDR, REVERSE DRAIN CURRENT (AMPERES) 16 D [Cont.] 14 VDS=100V 12 10 VDS=250V 8 VDS=400V 6 4 2 0 0 Coss 100 Crss 10 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I =I 1,000 10mS 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 100S C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 120 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Drain D PAK Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TJ =+25C 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-7005 Rev B 2-2002 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Gate Drain Source 2.21 (.087) 2.59 (.102) Source Drain Gate Dimensions in Millimeters (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated