DATA SH EET
Product data sheet
Supersedes data of 1997 Sep 04
1999 Apr 14
DISCRETE SEMICONDUCTORS
PZTA14
NPN Darlington transistor
handbook, halfpage
M3D087
1999 Apr 14 2
NXP Semiconductors Product data sheet
NPN Darlington transistor PZTA14
FEATURES
•High current (max. 500 mA)
•Low voltage (max. 30 V).
APPLICATIONS
•Pre-amplifiers requiri ng high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
PINNING
PIN DESCRIPTION
1base/input
2, 4 collector/output
3emitter/ground
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
132
4
MAM319
TR2
2, 4
3
Top view
1
TR1
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tinplate d, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT2 23 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volt a ge open emitter −30 V
VCES collector-emitter voltage VBE = 0 −30 V
VEBO emitter-base vo ltage open collector −10 V
ICcollector current (DC) −500 mA
ICM peak collector current −800 mA
IBbase current (DC) −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.25 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 14 3
NXP Semiconductors Pr oduct data sheet
NPN Darlington transistor PZTA14
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tinplate d, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT2 23 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
Rth j-s thermal resistance from junction to soldering point 19 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V −100 nA
ICES collector cut-off current VBE = 0; VCE = 30 V −100 nA
IEBO emitter cut-off current IC = 0; VEB = 10 V −100 nA
hFE DC current gain VCE = 5 V; (see Fig.2)
IC = 10 mA 10 000 −
IC = 100 mA 20 000 −
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA −1.5 V
VBEon base-emitter on-state voltage IC = 100 mA; VCE = 5 V −2 V
fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz 125 −MHz
1999 Apr 14 4
NXP Semiconductors Pr oduct data sheet
NPN Darlington transistor PZTA14
handbook, full pagewidth
0
60000
80000
20000
40000
MGD837
10
−1
1IC (mA)
hFE
10 10
2
10
3
Fig.2 DC current gain; typical values.
VCE = 2 V.
1999 Apr 14 5
NXP Semiconductors Pr oduct data sheet
NPN Darlington transistor PZTA14
PACKAGE OUTLINE
UNIT A
1
b
p
cDEe
1
H
E
L
p
Qywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b
1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 Apr 14 6
NXP Semiconductors Product data sheet
NPN Darlington transistor PZTA14
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/04/pp7 Date of releas e: 1999 Apr 14 Document orde r number: 9397 750 05641
